The TP65H050G4QS 650V 50mΩ Gallium Nitride (GaN) FET is a normally-off device built using Transphorm’s Gen IV platform. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.
Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
The TP65H050G4QS is offered in an industry-standard TOLL with a Kelvin source and common source package configuration.
Key Specifications |
VDS (V) min |
650 |
VDSS(TR) (V) max |
800 |
RDS(on)eff (mΩ) max* |
60 |
QRR (nC) typ |
0 |
QG (nC) typ |
16 |
*Reflects both static and dynamic on-resistance |
Key Features
- Gen IV technology
- JEDEC-qualified GaN technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by
- Wide gate safety margin
- Transient over-voltage capability
- Very low QRR
- Reduced crossover loss
- RoHS-compliant and Halogen-free packaging
Key Benefits
- Achieves increased efficiency in both hard- and soft-switched circuits
- Increased power density
- Reduced system size and weight
- Overall lower system cost
- Easy to drive with commonly-used gate driver
- Kelvin source for improved performance
- Pin-to-pin drop in with e-mode with higher Vt for improved noise immunity
AN0003: Printed Circuit Board Layout and Probing for GaN FETs
AN0007: PQFN88 Lead-free 2nd Level Soldering Recommendations for Vapor Phase Reflow
AN0009: Recommended External Circuitry for Transphorm GaN FETs
AN0012: App Note AN0012 – Surface Mount Tape and Reel Information
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