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Press Releases4.24.24 - Transphorm and Weltrend Semiconductor Release New Integrated GaN System-in-Packages2.06.24 - Transphorm at APEC 2024: SuperGaN Innovation for Low to High Power Applications1.17.24 - Transphorm Announces Two 4-Lead TO-247 Devices, Expanding Product Portfolio for High Power Server, Renewable, Industrial Power Conversion1.11.24 - Renesas to Acquire Transphorm to Expand its Power Portfolio with GaN Technology12.14.23 - Transphorm and Weltrend Semiconductor’s New GaN System-In-Package Delivers Competitive Advantage by Supporting Multiple Power Levels11.30.23 - Transphorm Releases Two Battery Charger Reference Designs Ideal for Two- and Three-Wheeled Electric Vehicles11.15.23 - Transphorm and Allegro MicroSystems Team Up to Increase GaN Power System Performance for High Power Applications10.26.23 - Transphorm’s Top-Side Cooled TOLT FET Delivers Superior Thermal and Electrical Performance for Computing, AI, Energy, and Automotive Power Systems10.10.23 - Transphorm’s TOLL FETs Position GaN as Optimal Devices for Power Hungry AI Applications9.05.23 - New Transphorm White Paper: Normally-Off D-Mode GaN Advantages Vs. Normally-Off E-Mode GaN
