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TP65H035G4YS 
650V 35mΩ SuperGaN® FET in TO-247-4
The TP65H035G4YS 650V 35mΩ Gallium Nitride (GaN) FET is a normally-off device built using Transphorm’s Gen IV platform. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.
Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
The TP65H035G4YS is offered in an industry-standard TO-247-4 with a Kelvin source and common source package configuration.
| Key Specifications | |
|---|---|
| VDS (V) min | 650 |
| VDSS(TR) (V) max | 800 |
| RDS(on)eff (mΩ) max* | 41 |
| QRR (nC) typ | 0 |
| QG (nC) typ | 42.7 |
| *Reflects both static and dynamic on-resistance | |
Key Features
- Gen IV technology
- JEDEC-qualified GaN technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by
- Wide gate safety margin
- Transient over-voltage capability
- Very low QRR
- Reduced crossover loss
- RoHS-compliant and Halogen-free packaging
Key Benefits
- Achieves increased efficiency in both hard- and soft-switched circuits
- Increased power density
- Reduced system size and weight
- Overall lower system cost
- Easy to drive with commonly-used gate driver
- Kelvin source for improved performance
3D Files – TO-247-4L