Transphorm最高性能, 最可靠的GaN

TP65H150G4PS  SuperGaN

650V 150mΩ SuperGaN® FET in TO-220

The TP65H150G4PS 650V 150mΩ Gallium Nitride (GaN) FET is a normally-off device built using Transphorm’s Gen IV platform. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.

Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.

The TP65H150G4PS is offered in an industry-standard TO-220 with a common source package configuration.

Key Specifications
VDSS (V) 650
VDSS(TR) (V) 800
RDS(on) (mΩ) max* 180
Qrr (nC) typ 40
Qg (nC) typ 8
*Reflects both static and dynamic on-resistance

Key Features

  • Easy to drive—compatible with standard gate drivers
  • Low conduction and switching losses
  • Low Qrr of 40nC—no free-wheeling diode required
  • JEDEC-qualified GaN technology
  • RoHS compliant and Halogen-free

Key Benefits

  • Enables AC-DC and DC-DC
    • Increased power density
    • Reduced system size and weight
    • Overall lower system cost
  • Achieves increased efficiency in both hard- and soft-switched circuits
  • Easy to drive with commonly-used gate drivers
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