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TP65H035G4WSQA 
650V 35mΩ AEC-Q101 Qualified SuperGaN® FET in TO-247
The TP65H035G4WSQA 650V 35mΩ Gallium Nitride (GaN) FET is a normally-off device built using Transphorm’s GenIV platform. Using proprietary technology, resulting in reduced internal package inductance and a simplified assembly process. It combines a state-of-the-art high voltage GaN HEMT with a low voltage Silicon MOSFET to offer superior reliability and performance.
The device is also automotive qualified to 175C, having passed the Automotive Electronics Council’s AEC-Q101 stress tests for automotive-grade discrete semiconductors
Transphorm GaN offers improved efficiency over Silicon through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
The TP65H035G4WSQA is offered in an industry-standard 3-lead TO-247 with a common source package configuration.
| Key Specifications | |
|---|---|
| VDSS (V) | 650 |
| VDSS(TR) (V) | 800 |
| RDS(on)eff (mΩ) max* | 41 |
| QRR (nC) typ | 150 |
| QG (nC) typ | 22 |
| *Reflects both static and dynamic on-resistance | |
Key Features
- AEC-Q101 qualified GaN technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by
-
- Intrinsic lifetime tests
- Wide gate safety margin
- Transient over-voltage capability
- Enhanced inrush current capability
- Very low QRR
- Reduced crossover loss
- RoHS-compliant and Halogen-free packaging
Key Benefits
- Enables AC-DC bridgeless totem-pole PFC designs
- Increased power density
- Reduced system size and weight
- Overall lower system cost
- Achieves increased efficiency in both hard- and soft-switched circuits
- Easy to drive with commonly-used gate drivers
- GSD pin layout improves high speed design
Output Power (W)
Output Power (W)
3D Files – TO-247
