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TP65H035G4WS 
650V 35mΩ GaN FET (SuperGaN®) in TO-247
The TP65H035G4WS 650V 35mΩ Gallium Nitride (GaN) FET is a normally-off device built using Transphorm’s Gen IV platform. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.
Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
The TP65H035G4WS is offered in an industry-standard 3 lead TO-247 with a common source package configuration.
| Key Specifications | |
|---|---|
| VDSS (V) min | 650 |
| VDSS(TR) (V) max | 800 |
| RDS(on)eff (mΩ) max* | 41 |
| QRR (nC) typ | 150 |
| QG (nC) typ | 22 |
| *Reflects both static and dynamic on-resistance | |
Key Features
- JEDEC qualified GaN technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by
-
- Intrinsic lifetime tests
- Wide gate safety margin
- Transient over-voltage capability
- Very low QRR
- Reduced crossover loss
- RoHS-compliant and Halogen-free packaging
Key Benefits
- Enables AC-DC bridgeless totem-pole PFC designs
- Increased power density
- Reduced system size and weight
- Overall lower system cost
- Achieves increased efficiency in both hard- and soft-switched circuits
- Easy to drive with commonly-used gate drivers
- GSD pin layout improves high speed design
Output Power (W)
Output Power (W)
3D Files – TO-247
