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New Reference Designs
300 W + 600 W AC-to-DC
Battery Chargers
- CC/CV charging profile
- Up to 95% peak efficiency
- Robust SuperGaN FETs with
analog controllers
Performance Enhancement
Transphorm + Allegro
MicroSystems Collaborate
- SuperGaN FETs + Isolated Gate Drivers
purpose-built for GaN - 30% footprint reduction
- Evaluation board available
New SuperGaN Device
First-Ever
Top-Side Cooled
TOLT GaN Package
- 72 mΩ surface mount device
- Strong thermal performance
- Simplified SMD-based
PCB assembly
New SuperGaN Devices
Industry Standard
TOLL Packages
- 35, 50, and 72 mΩ SMDs
- Drop-in replacement option for e-mode
- Supports power-hungry
AC-to-DC / DC-to-DC systems
White Paper
Normally-Off D-Mode GaN
vs. E-Mode GaN
- Normally-off D-Mode GaN harnesses GaN’s natural benefits,
whereas e-mode makes performance compromises.
New Solar Energy Application
World’s First Integrated
Microinverter PV Systems
Use Transphorm GaN
- SolarUnit models: 800 W, 920 W, 1500 W
- 150 mΩ + 70 mΩ Transphorm FETs
- Power Stages: DC-to-DC and DC-to-AC
- Peak efficiency: 97.3 % average
GaN Robustness Milestone
Transphorm FET
Demonstrates 5 μs SCWT
- 12 kW max power output
- 99.2% peak efficiency
- Meets servo motor, industrial motor,
and automotive powertrain requirement
Application Note
Low-Cost Driver Solution
- Pairs with SuperGaN FETs
- Delivers Up to 99% Efficiency
- Further Reduces Low- to
Mid-Power System Costs
New Design Resources
1200 V GaN FET Device
Model & Datasheet
- Verilog-A simulation model
- Proven 98.7% efficiency
- Supports next generation
3-phase and EV power sysetms
Product Portfolio Additions
Six New Devices in
Industry Standard Packages
- Pin-to-pin compatible with e-mode GaN devices
- Proven higher performance and reliability
- SuperGaN d-mode two-switch normally-off platform
Third Evaluation Board with Microchip Support
3 kW Inverter Board With
Microchip Digital
Signal Controller
- ~99% power efficiency
- Non-isolated full bridge topology
- Microchip dev tools, global support access
New Integrated GaN Device
Weltrend SuperGaN SiP
- Multi-mode flyback PWM controller +
240 mΩ SuperGaN® FET - Power density of 26 W/in3
- Supports 45 to 100 W USB-C
power adapters
ChargerLAB Teardown
HP 65W GaN USB-C
Laptop Charger
- TP65H300G4LSG SuperGaN® FET
- Dual USB-C PD PPS fast charger
- Labeled “Powerfully Petite” and
“Tiny but Mighty”
New Design Resource
240W Power Adapter
Reference Design
- 650V 150mΩ SuperGaN FET
- 96% peak power efficiency
- 30 W/in3 power density
- CCM Boost PFC + Half Bridge LLC topology
Head-to-head comparison
Datasheets don’t tell
the whole story.
• SuperGan FET vs. e-mode FET
• 65 W USB PD charger application
• SuperGaN: higher efficiency, lower losses
No Two Wide Bandgap
Technologies Are The Same.
- Greater Efficiency
- Higher Power Operation
- Lower Switching Losses
- Lower Temperature Operation
IN PRODUCTION TICKER
Transphorm Wire
Press ReleaseNov 30 2023Transphorm Releases Two Battery Charger Reference Designs Ideal for Two- and Three-Wheeled Electric VehiclesEventNov 29 2023PE Internațional Conference 2024EventNov 29 2023APEC 2024
EventNov 29 2023IEEE EDS Continuing Education Webinar SeriesPress ReleaseNov 15 2023Transphorm and Allegro MicroSystems Team Up to Increase GaN Power System Performance for High Power ApplicationsPress ReleaseOct 26 2023Transphorm’s Top-Side Cooled TOLT FET Delivers Superior Thermal and Electrical Performance for Computing, AI, Energy, and Automotive Power Systems
Press ReleaseOct 10 2023Transphorm’s TOLL FETs Position GaN as Optimal Devices for Power Hungry AI ApplicationsPress ReleaseSep 5 2023New Transphorm White Paper: Normally-Off D-Mode GaN Advantages Vs. Normally-Off E-Mode GaNPress ReleaseAug 28 2023Transphorm at electronica India 2023: High Voltage SuperGaN Solutions Boosting Electric Vehicle Performance