TransphormHighest Performance, Highest Reliability GaN

News Release

Renesas to Acquire Transphorm
to Expand its Power Portfolio
with GaN Technology

  • Acquisition Accelerates Renesas’ Wide Bandgap Expertise
    and Roadmap to Fast-Growing Market Opportunities for EVs,
    Data Centers & AI Power, and Renewable Energy

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Join us at Booth 1813

SuperGaN Innovation
for Low to High Power
Applications

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New GaN Devices

4-Lead SuperGaN FETs

  • TO-247-4L packages
  • 35 and 50 mΩ RDS(on)
  • Improved switching performance
    over alternative technologies

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New Reference Design

100 W USB-C PD
QRF Adapter Board

  • Uses cost-effective SuperGaN SiP
    from Weltrend
  • Second SiP board, following
    65 W USB-C board
  • Enables economies of scale

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New Reference Designs

300 W + 600 W AC-to-DC
Battery Chargers

  • CC/CV charging profile
  • Up to 95% peak efficiency
  • Robust SuperGaN FETs with
    analog controllers

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Performance Enhancement

Transphorm + Allegro
MicroSystems Collaborate

  • SuperGaN FETs + Isolated Gate Drivers
    purpose-built for GaN
  • 30% footprint reduction
  • Evaluation board available

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New SuperGaN Device

First-Ever
Top-Side Cooled
TOLT GaN Package

  • 72 mΩ surface mount device
  • Strong thermal performance
  • Simplified SMD-based
    PCB assembly

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New SuperGaN Devices

Industry Standard
TOLL Packages

  • 35, 50, and 72 mΩ SMDs
  • Drop-in replacement option for e-mode
  • Supports power-hungry
    AC-to-DC / DC-to-DC systems

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White Paper

Normally-Off D-Mode GaN
vs. E-Mode GaN

  • Normally-off D-Mode GaN harnesses GaN’s natural benefits,
    whereas e-mode makes performance compromises.

Read the Paper

IN PRODUCTION TICKER

Transphorm Wire

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Transphorm prioritizes Quality + Reliability. To ensure our Q+R, we innovate at each stage within the FET development process—design, fabrication, device, and application support. The result? Customers produce groundbreaking, high performing GaN-based products that reimagine what’s possible with power. Welcome to the GaN Revolution.