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New Reference Design
First Bidirectional
SuperGaN Battery Charger
- 300 W DC-to-DC power conversion
- 97.3% peak efficiency
- 36.5 W/in3 power density
Join us at Booth 1813
Spotlight: SuperGaN
High Power
System Innovation
- June 11 - 13
- Hall 7, Stall 108
New GaN Devices
SuperGaN SiP Family
Increases by Two
- New 150 mΩ and 480 mΩ SiPs join
flagship 240 mΩ SiP - Power level support from 30 W to ~200 W
- Simple design approach, fewer components
- Used in high performance, low-profile
UBS-C and IoT adapters
News Release
Renesas to Acquire Transphorm
to Expand its Power Portfolio
with GaN Technology
- Acquisition Accelerates Renesas’ Wide Bandgap Expertise
and Roadmap to Fast-Growing Market Opportunities for EVs,
Data Centers & AI Power, and Renewable Energy
New GaN Devices
4-Lead SuperGaN FETs
- TO-247-4L packages
- 35 and 50 mΩ RDS(on)
- Improved switching performance
over alternative technologies
New Reference Design
100 W USB-C PD
QRF Adapter Board
- Uses cost-effective SuperGaN SiP
from Weltrend - Second SiP board, following
65 W USB-C board - Enables economies of scale
New Reference Designs
300 W + 600 W AC-to-DC
Battery Chargers
- CC/CV charging profile
- Up to 95% peak efficiency
- Robust SuperGaN FETs with
analog controllers
Performance Enhancement
Transphorm + Allegro
MicroSystems Collaborate
- SuperGaN FETs + Isolated Gate Drivers
purpose-built for GaN - 30% footprint reduction
- Evaluation board available
New SuperGaN Device
First-Ever
Top-Side Cooled
TOLT GaN Package
- 72 mΩ surface mount device
- Strong thermal performance
- Simplified SMD-based
PCB assembly
New SuperGaN Devices
Industry Standard
TOLL Packages
- 35, 50, and 72 mΩ SMDs
- Drop-in replacement option for e-mode
- Supports power-hungry
AC-to-DC / DC-to-DC systems
IN PRODUCTION TICKER
Transphorm Wire
Press Release6月 20 2024Renesas Completes Acquisition of TransphormPress Release6月 11 2024Transphorm Demonstrates a Bidirectional SuperGaN Power Supply with New Reference Design for E-Mobility and Energy/Industrial MarketsEvent5月 24 2024
Press Release5月 20 2024Transphorm’s SuperGaN at PCIM 2024: Surpassing SiC and e-mode GaN Capabilities in High Power SystemsPress Release4月 24 2024Transphorm and Weltrend Semiconductor Release New Integrated GaN System-in-PackagesEvent3月 15 2024Automotive Tech Forum 2024
Press Release2月 6 2024Transphorm at APEC 2024: SuperGaN Innovation for Low to High Power ApplicationsPress Release1月 17 2024Transphorm Announces Two 4-Lead TO-247 Devices, Expanding Product Portfolio for High Power Server, Renewable, Industrial Power ConversionPress Release1月 11 2024Renesas to Acquire Transphorm to Expand its Power Portfolio with GaN Technology
Press Release12月 14 2023Transphorm and Weltrend Semiconductor’s New GaN System-In-Package Delivers Competitive Advantage by Supporting Multiple Power LevelsPress Release11月 30 2023Transphorm Releases Two Battery Charger Reference Designs Ideal for Two- and Three-Wheeled Electric VehiclesEvent11月 29 2023PE Internațional Conference 2024