TransphormHighest Performance, Highest Reliability GaN

TP65H300G4JSGB  SuperGaN

650V 240mΩ SuperGaN® FET in PQFN56

The TP65H300G4JSGB 650V 240mΩ Gallium Nitride (GaN) FET is a normally-off device built using Transphorm’s Gen IV platform. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.

Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.

The TP65H300G4JSGB is offered in an industry-standard PQFN56 with a Kelvin source and common source package configuration.

Key Specifications
VDS (V) min 650
VDSS(TR) (V) max 800
RDS(on)eff (mΩ) max* 240
QRR (nC) typ 0
QG (nC) typ 9.6
*Reflects both static and dynamic on-resistance

Key Features

  • Gen IV technology
  • JEDEC-qualified GaN technology
  • Dynamic RDS(on)eff production tested
  • Robust design, defined by
    • Wide gate safety margin
    • Transient over-voltage capability
  • Very low QRR
  • Reduced crossover loss
  • RoHS-compliant and Halogen-free packaging

Key Benefits

  • Achieves increased efficiency in both hard- and soft-switched circuits
    • Increased power density
    • Reduced system size and weight
    • Overall lower system cost
  • Easy to drive with commonly-used gate drivers
  • Kelvin source for improved performance
  • Pin-to-pin Drop-in with e-mode GaN FET
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